Impurity diffusion and gettering in silicon

symposium held November 27-30, 1984, Boston, Massachusetts, U.S.A.

Publisher: Materials Research Society in Pittsburgh, Pa

Written in English
Published: Pages: 284 Downloads: 33
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Subjects:

  • Semiconductors -- Defects -- Congresses.,
  • Diffusion -- Congresses.,
  • Semiconductor doping -- Congresses.,
  • Getters -- Congresses.

Edition Notes

Statementeditors, Richard B. Fair, Charles W. Pearce, Jack Washburn.
SeriesMaterials Research Society symposia proceedings,, v. 36
ContributionsFair, Richard B., Pearce, Charles W., Washburn, Jack, 1921-, Materials Research Society. Meeting, Symposium on Impurity Diffusion and Gettering in Semiconductors (1984 : Boston, Mass.)
Classifications
LC ClassificationsTK7871.85 .I47 1985
The Physical Object
Paginationxiii, 284 p. ;
Number of Pages284
ID Numbers
Open LibraryOL3026804M
ISBN 100931837014
LC Control Number85007226

Impurity diffusion and gettering in silicon: symposium held November , , Boston, Massachusetts, U.S.A. Abstract. Physical and numerical modeling of gettering metallic impurities away from Si device active regions has been carried out. The modeled aspects include the dissolution of precipitated impurity (if any), diffusion of dissolved impurities from the gettered to the gettering region, and gettered impurity stabilization in the gettering region via segregation and/or precipitation Cited by: 2.   The specific properties of main and rare impurities in silicon are examined, as well as the detection methods and requirements in modern technology. Finally, impurity gettering is studied along with modern techniques to determine gettering efficiency. In all of these subjects, reliable and up-to-date data are : Klaus Graff.   The aims of this work are to getter undesirable impurities from low-cost multicrystalline silicon (mc-Si) wafers and then enhance their electronic properties. We used an efficient process which consists of applying phosphorus diffusion into a sacrificial porous silicon (PS) layer in which the gettered impurities have been trapped after the heat by:

Abstract: Isothermal annealing above °C has been reported to reduce the dislocation density in multicrystalline silicon (mc-Si), presumably by pairwise dislocation annihilation. However, this high-temperature process may also cause significant impurity contamination, canceling out the positive effect of dislocation density reduction on cell by:   The Process Behind Gettering. The process of removing impurities through gettering is done through the following: The impurities that are to be gettered are discharged into solid solutions from any precipitate they’re in. Next, then go through diffusion through the silicon. Notes for Microelectronics Fabrication. This note covers the following topics: Semiconductor and Solid State Physics, Crystal Structure and Growth, Defects in Semiconductors and Internal Gettering, Silicon Dioxide and Thermal Oxidation, Current-Voltage Analysis, Thickness Measurement, Ultra Thin Oxides, Impurity Diffusion, Sheet Resistance and Diffusion . Tradeoffs Between Impurity Gettering, Bulk Degradation, and Surface Passivation of Boron-Rich Layers on Silicon Solar Cells Abstract: The suitability of using a boron-rich layer (BRL) formed during boron diffusion as a gettering layer for n-type silicon solar cells is by:

Gettering of transition metal impurities during phosphorus emitter diffusion in multicrystalline silicon solar cell processing. Metallic impurities such as Fe, Cu and Ni are always present in silicon materials for solar cells, causing carrier recombination and reduced efficiencies. However, such impurities can be removed during cell fabrication, through a process known as impurity ‘gettering’, whereby the impurities are trapped in a region of the device where they have less impact. Book of Abstracts Fourth Workshop Role of Point Defects/Defect Complexes in Silicon Charge State Dependent Iron Diffusion in Silicon Below °C by incorporating defect engineering approaches such as impurity gettering and impurityldefect passivation. The current DOENREL program on Crystalline Silicon. @article{osti_, title = {Modeling of gettering of precipitated impurities from Si for carrier lifetime improvement in solar cell applications}, author = {Plekhanov, P S and Gafiteanu, R and Goesele, U M and Tan, T Y}, abstractNote = {Physical and numerical modeling of impurity gettering from multicrystalline Si for solar cell production.

Impurity diffusion and gettering in silicon Download PDF EPUB FB2

Impurity Precipitation, Dissolution, Gettering and Passivation in PV Silicon: Final Technical Report [National Renewable Energy Laboratory (NR] on *FREE* shipping on qualifying offers.

This report describes the major progress in understanding the physics of transition metals in silicon and their possible impact on the efficiency of solar cells that was.

The Paperback of the Impurity Diffusion and Gettering in Silicon: Volume 36 by Richard B. Fair at Barnes & Noble. FREE Shipping on $35 or more.

Due to COVID, orders may be : - Impurity Diffusion and Gettering in Silicon: Materials Research Society Symposia Proceedings: Volume 36 Editors: Richard B.

Fair, Charles W. Pearce and Jack Washburn Frontmatter More informationFile Size: KB. Impurity Diffusion and Gettering in Silicon: Volume 36 by Richard B. Fair,available at Book Depository with free delivery worldwide.

This chapter briefly describes the solubilities, diffusivities, and electrical properties of metal impurities that are most frequently detected in multicrystalline silicon.

The diffusion length values necessary for highly efficient crystalline silicon solar cells, which set a limit on the electrically active metal concentration, are estimated. The specific properties of main and rare impurities in silicon are examined, as well as the detection methods and requirements in modern technology.

Finally, impurity gettering is studied along with modern techniques to determine gettering efficiency. In all of these subjects, reliable and up-to-date data are : Springer-Verlag Berlin Heidelberg. Other authors proposed that silicon self-interstitial current generated during phosphorus (P) diffusion is an essential factor of gettering mechanism, and also found that Fermi-level-enhanced solubility in the P diffused layer contributes to the gettering effect.

The diffusion technique normally used for impurity gettering is based on a liquid Cited by: Gettering impurities from crystalline silicon by phosphorus diffusion using a porous silicon layer. The possible benefits of phosphorus-based gettering applied to crystalline silicon wafers have been evaluated.

The gettering process is achieved by forming porous silicon (PS) layers on both sides of the Si wafers. Gettering in silicon is a well established procedure by which metallic impurities are concentrated within a predetermined part of the specimen.

For example, in phosphorous diffusion gettering (PDG) the gettering part is a very thin silicon layer at the Si/PSG-interface (PSG: amorphous phosphorsilicate glass [1]).Cited by: 4.

The possible benefits of phosphorus-based gettering applied to crystalline silicon wafers have been evaluated. The gettering process is achieved by forming porous silicon (PS) layers on both sides of the Si wafers.

The PS layers were formed by the. Request PDF | Diffusion Gettering of Metal Impurities in Crystalline Silicon | We present here our latest results of boron and phosphorus diffusion gettering of iron in crystalline silicon.

The. Phosphorus (P) diffusions are commonly used to achieve effective impurity gettering in silicon solar cell fabrication (see, for example,,). The gettering effects of boron (B) diffusions, on the other hand, rely on the specific process conditions. Given the prominent role that impurity gettering has played in the development of silicon PV technology, and the potential for doped Cited by: Dislocations are known to act as gettering centers for impurities, other point defects, and precipitates.

In the case of silicon, it is known that impurities such as oxygen, phosphorus, and heavy metals are attracted by dislocations. In this paper, we report a study on the possibility of gettering transition metal impurities from solar grade crystalline silicon (Si).

Porous silicon layers were formed by the stain-etching method on both sides of the Si wafer. Aluminum diffusion. In multicrystalline silicon wafers, external gettering by phosphorus diffusion, as well as by Al–Si alloying are efficient, provided the temperature does not exceed °C.

Impurity trapping and gettering in amorphous silicon S. Coffa, J. Poate, D. Jacobson, and A. Polman AT&T Bell Laboratories, Mountain Avenue, Murray Hill, New Jersey (Received 22 October ; accepted for publication 25 March 1)File Size: KB. Impurity diffusion refers to a situation in which the impurity is at such a low concentration that it does not significantly affect chemically the host, and in which the impurity atoms themselves diffuse independently of one another.

At the same time the nomenclature used in the gettering world is explained. Of key importance is the difference between segregation gettering and relaxation gettering.

Subsequently the different backside gettering techniques are reviewed, including backside damage, thin layer depositions and ion : Cor Claeys, Eddy Simoen.

PART 1. Fundamentals of copper and iron in silicon. 3 Diffusion, defect reactions, and recombination properties of copper in silicon.

Determination of intrinsic and effective diffusion coefficients of copper in silicon. Copper is one of the most ubiquitous impurities in silicon device production [30]. Abstract. The general discussion of diffusion in Section did not take into account the particular structure of silicon.

The intention of this chapter is to discuss the atomistic processes associated with the diffusion of impurities and their interaction with Cited by: 1. Purchase Self-diffusion and Impurity Diffusion in Pure Metals, Volume 14 - 1st Edition.

Print Book & E-Book. ISBNP diffusion into silicon result in phosphorus vacancies or dislocations that serve as trapping sites for impurity atoms, such as gold. Another effect of P diffusion is the creation of Si-P precipitates, which have been shown to be capable of removing Ni impurities through interactions between Si self-interstitials and Ni atoms, nucleating NiSi 2 particles in the process.

[4,15] In addition, these doped-polycrystalline films have been shown to provide strong impurity gettering effects, [16, 17] which can replace the standard phosphorus diffusion gettering, and.

Gettering impurities from crystalline silicon by aluminum diffusion using a porous silicon layer. Physical and numerical modeling of gettering metallic impurities away from Si device active regions has been carried out.

The modeled aspects include the dissolution of precipitated impurity (if any), diffusion of dissolved impurities from the gettered to the gettering region, and gettered impurity stabilization in the gettering region via segregation and/or Cited by: 2.

The issue of the 10th High Purity Silicon symposium provides an overview of the latest developments in the growth, characterization, devices processing, and application of high purity silicon in either bulk or epitaxial form.

The emphasis is on the control and prevention of impurity incorporation, characterization and detection of defects and impurity states in high purity and Reviews: 1.

Phosphorus diffusion gettering of gold in silicon is a reversible process with strong temperature and phosphorus concentration dependence. We show explicitly that gold diffuses back and forth between the highly doped phosphorus layer and the bulk of the material when the annealing temperature is varied.

Metal Impurities in Silicon-Device Fabricationtreats the transition-metal impurities generated during the fabrication of silicon samples and devices. The different mechanisms responsible for contamination are discussed, and a survey is given of their impact on device performance.

The specific properties of the main and rare impurities in silicon are examined, as well as the. The book is a reference for researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits.

It has an interdisciplinary nature by combining different disciplines such as material science, defect engineering, device processing, defect and device characterization and device physics. Find many great new & used options and get the best deals for MRS Proceedings: Impurity Diffusion and Gettering in Silicon: Volume 36 (, Paperback) at the best online prices at eBay.

Free shipping for many products!. Diffusion and Precipitation Models for Silicon Gettering and Ultra Shallow Junction Formation Hsiu-Wu Guo Chair of the Supervisory Committee: Professor Scott T. Dunham Electrical Engineering The progress of MOSFET evolution in the IC industry over the past few years has relied on rapid miniaturization,new materials, or new Size: 4MB.

We notice that high-temperature annealing in infrared furnace has enhanced the impurity diffusion into the sacrificial porous silicon layer.

Thus, the phosphorus-rich PS acts as an efficient external gettering site in which the impurities Cited by: Physical and numerical modeling of gettering metallic impurities away from Si device active regions has been carried out. The modeled aspects include the dissolution of precipitated impurity (if any), diffusion of dissolved impurities from the gettered to the gettering region, and gettered impurity stabilization in the gettering region via.